| 1. | Tera xtal manufactures a variety of oxide single crystal wafers for wireless communication , opto - electronic and light emitting diode ( led ) applications
兆晶制作多样的氧化物晶圆以提供无线通讯、光电等产业应用。 |
| 2. | This thesis discusses the application of fast multichannel spectral measurement in measuring spectral parameters of light emitting diode ( led )
本文详细阐述了快速多通道光谱测量技术在led光谱特性参数测量中的应用研究。 |
| 3. | Osram opto semiconductors has revealed the first light emitting diode ( led ) to achieve more than 1000 lumen - - brighter than a 50w halogen lamp , claimed the company
欧司朗光电半导体公司声称已经研发出首个光输出超过1000流明的led （发光二极管） ，它的亮度超过了50w的卤素灯。 |
| 4. | At individual stations , there are provision of tactile guide paths , light emitting diode ( led ) display boards and induction of loops to facilitate different groups of disabled passengers
于个别车站亦有为伤残人士提供辅助设施，如凹凸纹引导、电子萤幕告示板及感应环线。 |
| 5. | The application of light emitting diode ( led ) therapy in biology and medicine is summarized , which focuses on the experiments in animal model , animal cells and clinical research
摘要综述了国内外以发光二极管为光源的光疗法在生物医学中的应用研究，主要从动物体试验，动物细胞实验和医学临床进行了分析，对医学临床进行了重点的分析研究。 |
| 6. | Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。 |
| 7. | Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo , tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo . as we know , band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ ( 1 - x ) o薄膜，可以在保持zno六方纤锌矿( wurtzite )结构的同时有效调节调节薄膜的禁带宽度，制备出基于氧化锌的量子阱、超晶格及相关的光电器件，如基于氧化锌的紫外光探测器、紫外发光二极管和紫外激光二极管等光电子器件。 |
